China’s 2D Transistor Could Transform Processors with Higher Speeds and Efficiency

Researchers in China have announced a significant advancement in transistor technology. They assert that a newly designed silicon-free transistor could greatly improve processing speeds and decrease energy usage. The transistor was created utilizing two-dimensional materials. If this advancement is successfully implemented in processors, it could enhance chip performance by 40 percent relative to current silicon-based chips while using 10 percent less energy.

As per the study released in Nature, the research group presented a gate-all-around field-effect transistor (GAAFET) constructed with bismuth oxyselenide. This design contrasts with traditional fin field-effect transistors (FinFETs) by surrounding the transistor’s source entirely with a gate on all four sides rather than three. The researchers proposed that this design enhances electrostatic control and enables greater drive currents. This will result in enhanced efficiency.

According to the South China Morning Post, Hailin Peng, the lead author and a Chemistry Professor at Peking University, characterized the innovation as a departure from traditional materials instead of merely an enhancement of current technology. The research indicates that bismuth oxyselenide provides superior carrier mobility, allowing quicker electron movement in an electric field. The material’s elevated dielectric constant has also been noted as a positive aspect enhancing energy efficiency.

The latest transistors are said to exhibit greater flexibility and reduced brittleness compared to silicon-based options. Should these transistors be effectively produced on a large scale, China may circumvent limitations on acquiring advanced chips. Through the use of a different semiconductor material, Chinese producers could advance toward a self-sufficient chip production method, decreasing dependence on current technology from worldwide semiconductor companies.